DIODE SIL CARB 650V 30A TO247-3
| Part | Current - Average Rectified (Io) | Supplier Device Package | Voltage - DC Reverse (Vr) (Max) [Max] | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Package / Case | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Mounting Type | Voltage - Forward (Vf) (Max) @ If | Technology | Speed |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 30 A | PG-TO247-3-1 | 650 V | 1.1 mA | 860 pF | 0 ns | TO-247-3 | 175 ░C | -55 C | Through Hole | 1.7 V | SiC (Silicon Carbide) Schottky | No Recovery Time |