ZVP2110ASTZ

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Diodes Inc

P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

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Active

Diodes Inc

P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

Technical Specifications

Parameters and characteristics for this part

Specification	ZVP2110ASTZ

Current - Continuous Drain (Id) @ 25°C	230 mA
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	100 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	E-Line-3
Power Dissipation (Max)	700 mW
Rds On (Max) @ Id, Vgs	8 Ohm
Supplier Device Package	E-Line (TO-92 compatible)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

P-Channel Enhancement Mode Vertical DMOS FET

Part	Vgs(th) (Max) @ Id	FET Type	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Rds On (Max) @ Id, Vgs	Package / Case	Vgs (Max)	Supplier Device Package	Technology	Power Dissipation (Max)	Power Dissipation (Max) [Max]
Diodes Inc ZVP2110ASTZ	3.5 V	P-Channel	230 mA	100 pF	10 V	100 V	-55 °C	150 °C	Through Hole	8 Ohm	E-Line-3	20 V	E-Line (TO-92 compatible)	MOSFET (Metal Oxide)	700 mW
Diodes Inc ZVP2110GTA	3.5 V	P-Channel	310 mA	100 pF	10 V	100 V	-55 °C	150 °C	Surface Mount	8 Ohm	TO-261-4 TO-261AA	20 V	SOT-223-3	MOSFET (Metal Oxide)		2 W
Diodes Inc ZVP2110A	3.5 V	P-Channel	230 mA	100 pF	10 V	100 V	-55 °C	150 °C	Through Hole	8 Ohm	TO-226-3 TO-92-3	20 V	TO-92	MOSFET (Metal Oxide)	700 mW

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly