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P-Channel Enhancement Mode Vertical DMOS FET
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P-Channel Enhancement Mode Vertical DMOS FET
P-Channel Enhancement Mode Vertical DMOS FET
| Part | Vgs(th) (Max) @ Id | FET Type | Current - Continuous Drain (Id) @ 25°C | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Drain to Source Voltage (Vdss) | Operating Temperature [Min] | Operating Temperature [Max] | Mounting Type | Rds On (Max) @ Id, Vgs | Package / Case | Vgs (Max) | Supplier Device Package | Technology | Power Dissipation (Max) | Power Dissipation (Max) [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Diodes Inc | 3.5 V | P-Channel | 230 mA | 100 pF | 10 V | 100 V | -55 °C | 150 °C | Through Hole | 8 Ohm | E-Line-3 | 20 V | E-Line (TO-92 compatible) | MOSFET (Metal Oxide) | 700 mW | |
Diodes Inc | 3.5 V | P-Channel | 310 mA | 100 pF | 10 V | 100 V | -55 °C | 150 °C | Surface Mount | 8 Ohm | TO-261-4 TO-261AA | 20 V | SOT-223-3 | MOSFET (Metal Oxide) | 2 W | |
Diodes Inc | 3.5 V | P-Channel | 230 mA | 100 pF | 10 V | 100 V | -55 °C | 150 °C | Through Hole | 8 Ohm | TO-226-3 TO-92-3 | 20 V | TO-92 | MOSFET (Metal Oxide) | 700 mW |