IR2113PBF

NRND

INFINEON

THE IR2113 IS A 600 V HIGH-SIDE AND LOW-SIDE GATE DRIVER IC WITH SHUTDOWN (14 LEAD PDIP PACKAGE)

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IR2113PBF

NRND

INFINEON

THE IR2113 IS A 600 V HIGH-SIDE AND LOW-SIDE GATE DRIVER IC WITH SHUTDOWN (14 LEAD PDIP PACKAGE)

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Description Specifications Series Pricing CAD Documents

Description

General part information

IR2113 Series

The IR2113PBF is a high voltage high speed power MOSFET and IGBT Driver with independent high and low-side referenced output channels. Proprietary HVIC and latch immune CMOS technology enables ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL output and down to 3.3V logic. The output driver features a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive a N-channel power MOSFET or IGBT in the high-side configuration which operates up to 500 or 600V.

Technical Specifications

Parameters and characteristics for this part

Specification	IR2113PBF

Channel Type	Independent
Current - Peak Output (Sink)	2 A
Current - Peak Output (Source)	2 A
Driven Configuration	Half-Bridge
Fall Time (Typ)	17 ns
Gate Channel	N-Channel
Gate Type	IGBT, MOSFET, N-Channel MOSFET
High Side Voltage - Max (Bootstrap)	600 V
Input Type	Non-Inverting
Logic Voltage - VIH	9.5 V
Logic Voltage - VIL	6 V
Mounting Type	Through Hole
Number of Drivers	2
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-40 °C
Package Length	0.3 in
Package Name	14-DIP
Package Width	7.62 mm
Rise Time (Typ)	25 ns
Voltage - Supply (Maximum)	20 V
Voltage - Supply (Minimum)	3.3 V

IR2113 Series

Part	High Side Voltage - Max (Bootstrap)	Package Length	Package Name	Package Width	Number of Drivers	Operating Temperature (Min)	Operating Temperature (Max)	Current - Peak Output (Sink)	Current - Peak Output (Source)	Mounting Type	Rise Time (Typ)	Fall Time (Typ)	Voltage - Supply (Maximum)	Voltage - Supply (Minimum)	Channel Type	Logic Voltage - VIH	Logic Voltage - VIL	Input Type	Driven Configuration	Gate Channel	Gate Type	Package Features	Package Leads
INFINEON 98-0247	600 V	0.295 in	16-SOIC	7.5 mm	2	-40 °C	150 °C	2 A	2 A	Surface Mount	25 ns	17 ns	20 V	3.3 V	Independent	9.5 V	6 V	Non-Inverting	Half-Bridge	N-Channel	IGBT MOSFET N-Channel MOSFET
INFINEON IR2113SPBF	600 V	0.295 in	16-SOIC	7.5 mm	2	-40 °C	150 °C	2 A	2 A	Surface Mount	25 ns	17 ns	20 V	3.3 V	Independent	9.5 V	6 V	Non-Inverting	Half-Bridge	N-Channel	IGBT MOSFET N-Channel MOSFET
INFINEON IR2113-1PBF	600 V	0.3 in	14-DIP 14-PDIP	7.62 mm	2	-40 °C	150 °C	2 A	2 A	Through Hole	25 ns	17 ns	20 V	3.3 V	Independent	9.5 V	6 V	Non-Inverting	Half-Bridge	N-Channel	IGBT MOSFET N-Channel MOSFET	13 Leads
INFINEON 98-0119PBF	600 V		16-DIP (0.300" 7.62mm) 16-PDIP		2	-40 °C	150 °C	2 A	2 A	Through Hole	25 ns	17 ns	20 V	3.3 V	Independent	9.5 V	6 V	Non-Inverting	Half-Bridge	N-Channel	IGBT MOSFET N-Channel MOSFET		14 Leads
INFINEON IR2113PBF	600 V	0.3 in	14-DIP	7.62 mm	2	-40 °C	150 °C	2 A	2 A	Through Hole	25 ns	17 ns	20 V	3.3 V	Independent	9.5 V	6 V	Non-Inverting	Half-Bridge	N-Channel	IGBT MOSFET N-Channel MOSFET
INFINEON IR2113STR	600 V	0.295 in	16-SOIC	7.5 mm	2	-40 °C	150 °C	2 A	2 A	Surface Mount	25 ns	17 ns	20 V	3.3 V	Independent	9.5 V	6 V	Non-Inverting	Half-Bridge	N-Channel	IGBT MOSFET N-Channel MOSFET
INFINEON IR2113-1	600 V	0.3 in	14-DIP 14-PDIP	7.62 mm	2	-40 °C	150 °C	2 A	2 A	Through Hole	25 ns	17 ns	20 V	3.3 V	Independent	9.5 V	6 V	Non-Inverting	Half-Bridge	N-Channel	IGBT MOSFET N-Channel MOSFET	13 Leads
INFINEON IR2113	600 V	0.3 in	14-DIP	7.62 mm	2	-40 °C	150 °C	2 A	2 A	Through Hole	25 ns	17 ns	20 V	3.3 V	Independent	9.5 V	6 V	Non-Inverting	Half-Bridge	N-Channel	IGBT MOSFET N-Channel MOSFET
INFINEON IR2113-2	600 V		16-DIP (0.300" 7.62mm) 16-PDIP		2	-40 °C	150 °C	2 A	2 A	Through Hole	25 ns	17 ns	20 V	3.3 V	Independent	9.5 V	6 V	Non-Inverting	Half-Bridge	N-Channel	IGBT MOSFET N-Channel MOSFET		14 Leads
INFINEON IR2113SPBF

Pricing

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

Datasheet

Application Note EN

Datasheet