IR2113 Series

Manufacturer: INFINEON

Catalog

IC GATE DRVR HALF-BRIDGE 16SOIC

Part	High Side Voltage - Max (Bootstrap)	Package Length	Package Name	Package Width	Number of Drivers	Operating Temperature (Min)	Operating Temperature (Max)	Current - Peak Output (Sink)	Current - Peak Output (Source)	Mounting Type	Rise Time (Typ)	Fall Time (Typ)	Voltage - Supply (Maximum)	Voltage - Supply (Minimum)	Channel Type	Logic Voltage - VIH	Logic Voltage - VIL	Input Type	Driven Configuration	Gate Channel	Gate Type	Package Features	Package Leads
INFINEON 98-0247	600 V	0.295 in	16-SOIC	7.5 mm	2	-40 °C	150 °C	2 A	2 A	Surface Mount	25 ns	17 ns	20 V	3.3 V	Independent	9.5 V	6 V	Non-Inverting	Half-Bridge	N-Channel	IGBT MOSFET N-Channel MOSFET
INFINEON IR2113SPBF	600 V	0.295 in	16-SOIC	7.5 mm	2	-40 °C	150 °C	2 A	2 A	Surface Mount	25 ns	17 ns	20 V	3.3 V	Independent	9.5 V	6 V	Non-Inverting	Half-Bridge	N-Channel	IGBT MOSFET N-Channel MOSFET
INFINEON IR2113-1PBF	600 V	0.3 in	14-DIP 14-PDIP	7.62 mm	2	-40 °C	150 °C	2 A	2 A	Through Hole	25 ns	17 ns	20 V	3.3 V	Independent	9.5 V	6 V	Non-Inverting	Half-Bridge	N-Channel	IGBT MOSFET N-Channel MOSFET	13 Leads
INFINEON 98-0119PBF	600 V		16-DIP (0.300" 7.62mm) 16-PDIP		2	-40 °C	150 °C	2 A	2 A	Through Hole	25 ns	17 ns	20 V	3.3 V	Independent	9.5 V	6 V	Non-Inverting	Half-Bridge	N-Channel	IGBT MOSFET N-Channel MOSFET		14 Leads
INFINEON IR2113PBF	600 V	0.3 in	14-DIP	7.62 mm	2	-40 °C	150 °C	2 A	2 A	Through Hole	25 ns	17 ns	20 V	3.3 V	Independent	9.5 V	6 V	Non-Inverting	Half-Bridge	N-Channel	IGBT MOSFET N-Channel MOSFET
INFINEON IR2113STR	600 V	0.295 in	16-SOIC	7.5 mm	2	-40 °C	150 °C	2 A	2 A	Surface Mount	25 ns	17 ns	20 V	3.3 V	Independent	9.5 V	6 V	Non-Inverting	Half-Bridge	N-Channel	IGBT MOSFET N-Channel MOSFET
INFINEON IR2113-1	600 V	0.3 in	14-DIP 14-PDIP	7.62 mm	2	-40 °C	150 °C	2 A	2 A	Through Hole	25 ns	17 ns	20 V	3.3 V	Independent	9.5 V	6 V	Non-Inverting	Half-Bridge	N-Channel	IGBT MOSFET N-Channel MOSFET	13 Leads
INFINEON IR2113	600 V	0.3 in	14-DIP	7.62 mm	2	-40 °C	150 °C	2 A	2 A	Through Hole	25 ns	17 ns	20 V	3.3 V	Independent	9.5 V	6 V	Non-Inverting	Half-Bridge	N-Channel	IGBT MOSFET N-Channel MOSFET
INFINEON IR2113-2	600 V		16-DIP (0.300" 7.62mm) 16-PDIP		2	-40 °C	150 °C	2 A	2 A	Through Hole	25 ns	17 ns	20 V	3.3 V	Independent	9.5 V	6 V	Non-Inverting	Half-Bridge	N-Channel	IGBT MOSFET N-Channel MOSFET		14 Leads
INFINEON IR2113SPBF