Specification	CSD16322Q5C

Current - Continuous Drain (Id) (Ta)	21 A
Current - Continuous Drain (Id) (Tc)	97 A
Drain to Source Voltage (Vdss)	25 V
Drive Voltage (Max Rds On)	3 V
Drive Voltage (Min Rds On)	8 V
FET Type	N-Channel
Gate Charge (Max)	9.7 nC
Input Capacitance (Ciss) (Max)	1365 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	8-PowerTDFN
Package Name	8-SON
Power Dissipation (Max)	3.1 W
Rds On (Max)	5 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max) Negative	-8 V
Vgs (Max) Positive	10 V
Vgs(th) (Max)	1.4 V

CSD1632 Series

Part	Drive Voltage (Max Rds On)	Drive Voltage (Min Rds On)	Package / Case	Current - Continuous Drain (Id) (Tc)	Current - Continuous Drain (Id) (Ta)	Mounting Type	Operating Temperature (Min)	Operating Temperature (Max)	Package Name	Package Width	Package Length	Input Capacitance (Ciss) (Max)	Gate Charge (Max)	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	FET Type	Technology	Vgs (Max) Negative	Vgs (Max) Positive	Rds On (Max)	Vgs(th) (Max)
Texas Instruments CSD16321Q5C	3 V	8 V	8-PowerTDFN	100 A	31 A	Surface Mount	-55 °C	150 °C	8-VSON-CLIP	6 mm	5 mm	3100 pF	19 nC	25 V	3.1 W	N-Channel	MOSFET (Metal Oxide)	-8 V	10 V	2.4 mOhm 2.4 mOhm	1.4 V
Texas Instruments CSD16325Q5C	3 V	8 V	8-PowerTDFN		33 A	Surface Mount	-55 °C	150 °C	8-VSON-CLIP	6 mm	5 mm	4000 pF	25 nC	25 V	3.1 W	N-Channel	MOSFET (Metal Oxide)	-8 V	10 V	2 mOhm	1.4 V
Texas Instruments CSD16322Q5C	3 V	8 V	8-PowerTDFN	97 A	21 A	Surface Mount	-55 °C	150 °C	8-SON			1365 pF	9.7 nC	25 V	3.1 W	N-Channel	MOSFET (Metal Oxide)	-8 V	10 V	5 mOhm	1.4 V

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