IXFR15N100Q3

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IXYS

MOSFET N-CH 1000V 10A ISOPLUS247

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IXYS

MOSFET N-CH 1000V 10A ISOPLUS247

Technical Specifications

Parameters and characteristics for this part

Specification	IXFR15N100Q3

Current - Continuous Drain (Id) @ 25°C	10 A
Drain to Source Voltage (Vdss)	1000 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	64 nC
Input Capacitance (Ciss) (Max) @ Vds	3250 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max) [Max]	400 W
Rds On (Max) @ Id, Vgs	1.2 Ohm
Supplier Device Package	ISOPLUS247™
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	6.5 V

Part	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max) [Max]	Vgs (Max)	Vgs(th) (Max) @ Id	Package / Case	Technology	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	FET Type	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs
IXYS IXFR15N100Q3	ISOPLUS247™	64 nC	400 W	30 V	6.5 V	TO-247-3	MOSFET (Metal Oxide)	Through Hole	-55 °C	150 °C	3250 pF	10 V	10 A	N-Channel	1000 V	1.2 Ohm
IXYS IXFR15N80Q	ISOPLUS247™	90 nC	250 W	20 V	4.5 V	TO-247-3	MOSFET (Metal Oxide)	Through Hole	-55 °C	150 °C	4300 pF	10 V	13 A	N-Channel	800 V	600 mOhm
IXYS IXFR15N100Q

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 1000 V 10A (Tc) 400W (Tc) Through Hole ISOPLUS247™

Technical documentation and resources

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