MOSFET N-CH 1000V 10A ISOPLUS247
| Part | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs [Max] | Power Dissipation (Max) [Max] | Vgs (Max) | Vgs(th) (Max) @ Id | Package / Case | Technology | Mounting Type | Operating Temperature [Min] | Operating Temperature [Max] | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Current - Continuous Drain (Id) @ 25°C | FET Type | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IXYS | ISOPLUS247™ | 64 nC | 400 W | 30 V | 6.5 V | TO-247-3 | MOSFET (Metal Oxide) | Through Hole | -55 °C | 150 °C | 3250 pF | 10 V | 10 A | N-Channel | 1000 V | 1.2 Ohm |
IXYS | ISOPLUS247™ | 90 nC | 250 W | 20 V | 4.5 V | TO-247-3 | MOSFET (Metal Oxide) | Through Hole | -55 °C | 150 °C | 4300 pF | 10 V | 13 A | N-Channel | 800 V | 600 mOhm |
IXYS |