PBSS4260PANSX

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Nexperia USA Inc.

TRANS GP BJT NPN 60V 2A 960MW 6-PIN DFN-D EP T/R

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PBSS4260PANSX

Active

Nexperia USA Inc.

TRANS GP BJT NPN 60V 2A 960MW 6-PIN DFN-D EP T/R

Find alt

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Description Specifications Series Pricing CAD Documents

Description

General part information

PBSS4260 Series

NPN/NPN low VCEsatdouble transistor in a leadless medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.

Technical Specifications

Parameters and characteristics for this part

Specification	PBSS4260PANSX

Current - Collector (Ic) (Max)	2 A
Current - Collector Cutoff (Max)	100 nA
DC Current Gain (hFE) (Min)	120
Frequency - Transition	140 MHz
Grade	Automotive
Mounting Type	Surface Mount
NPN Count	2
Operating Temperature	150 °C
Package / Case	6-UDFN Exposed Pad
Package Name	DFN2020D-6
Power - Max	370 mW
Qualification	AEC-Q101
Transistor Configuration	Dual
Transistor Type	NPN
Vce Saturation (Max)	350 mV
Voltage - Collector Emitter Breakdown (Max)	60 V

PBSS4260 Series

60 V, 2 A NPN/NPN low VCEsat double transistor

Part	Qualification	Voltage - Collector Emitter Breakdown (Max)	DC Current Gain (hFE) (Min)	Mounting Type	Package / Case	Package Name	Grade	Frequency - Transition	Current - Collector (Ic) (Max)	PNP Count	Transistor Type	NPN Count	Operating Temperature	Vce Saturation (Max)	Power - Max	Current - Collector Cutoff (Max)	Transistor Configuration	Package Length	Package Width
Nexperia USA Inc. PBSS4260PANPSX	AEC-Q101	60 V	120	Surface Mount	6-UDFN Exposed Pad	DFN2020D-6	Automotive	140 MHz	2 A	1	NPN PNP	1	150 °C	350 mV	370 mW	100 nA
Nexperia USA Inc. PBSS4260PANSX	AEC-Q101	60 V	120	Surface Mount	6-UDFN Exposed Pad	DFN2020D-6	Automotive	140 MHz	2 A		NPN	2	150 °C	350 mV	370 mW	100 nA	Dual
Nexperia USA Inc. PBSS4260PAN,115	AEC-Q100	60 V	120	Surface Mount	6-UFDFN Exposed Pad	6-HUSON	Automotive	140 MHz	2 A		NPN	2	150 °C	90 mV	510 mW	100 nA	Dual	2 mm	2 mm