
Catalog
60 V, 2 A NPN/NPN low VCEsat double transistor
Description
AI
NPN/NPN low VCEsatdouble transistor in a leadless medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.
60 V, 2 A NPN/NPN low VCEsat double transistor
| Part | Qualification | Voltage - Collector Emitter Breakdown (Max) | DC Current Gain (hFE) (Min) | Mounting Type | Package / Case | Package Name | Grade | Frequency - Transition | Current - Collector (Ic) (Max) | PNP Count | Transistor Type | NPN Count | Operating Temperature | Vce Saturation (Max) | Power - Max | Current - Collector Cutoff (Max) | Transistor Configuration | Package Length | Package Width |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | AEC-Q101 | 60 V | 120 | Surface Mount | 6-UDFN Exposed Pad | DFN2020D-6 | Automotive | 140 MHz | 2 A | 1 | NPN PNP | 1 | 150 °C | 350 mV | 370 mW | 100 nA | |||
Nexperia USA Inc. | AEC-Q101 | 60 V | 120 | Surface Mount | 6-UDFN Exposed Pad | DFN2020D-6 | Automotive | 140 MHz | 2 A | NPN | 2 | 150 °C | 350 mV | 370 mW | 100 nA | Dual | |||
Nexperia USA Inc. | AEC-Q100 | 60 V | 120 | Surface Mount | 6-UFDFN Exposed Pad | 6-HUSON | Automotive | 140 MHz | 2 A | NPN | 2 | 150 °C | 90 mV | 510 mW | 100 nA | Dual | 2 mm | 2 mm |