DMN7022LFGQ-7

Obsolete

Diodes Inc

NRND = NOT RECOMMENDED FOR NEW DESIGN

Search across all available documentation for this part.

Obsolete

Diodes Inc

NRND = NOT RECOMMENDED FOR NEW DESIGN

Technical Specifications

Parameters and characteristics for this part

Specification	DMN7022LFGQ-7

Current - Continuous Drain (Id) @ 25°C	23 A
Drain to Source Voltage (Vdss)	75 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	56.5 nC
Input Capacitance (Ciss) (Max) @ Vds	2737 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerVDFN
Power Dissipation (Max) [Max]	2 W
Rds On (Max) @ Id, Vgs	22 mOhm
Supplier Device Package	POWERDI3333-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

NRND = Not Recommended for New Design

Part	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	FET Type	Technology	Mounting Type	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max) [Max]	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)
Diodes Inc DMN7022LFGQ-7	23 A	POWERDI3333-8	N-Channel	MOSFET (Metal Oxide)	Surface Mount	75 V	-55 °C	150 °C	22 mOhm	56.5 nC	8-PowerVDFN	3 V	2737 pF	2 W	20 V	4.5 V 10 V
Diodes Inc DMN7022LFG-7	7.8 A	POWERDI3333-8	N-Channel	MOSFET (Metal Oxide)	Surface Mount	75 V	-55 °C	150 °C	22 mOhm	56.5 nC	8-PowerVDFN	3 V	2737 pF	900 mW	20 V	4.5 V 10 V
Diodes Inc DMN7022LFGQ-13	23 A	POWERDI3333-8	N-Channel	MOSFET (Metal Oxide)	Surface Mount	75 V	-55 °C	150 °C	22 mOhm	56.5 nC	8-PowerVDFN	3 V	2737 pF	2 W	20 V	4.5 V 10 V
Diodes Inc DMN7022LFG-13	7.8 A	POWERDI3333-8	N-Channel	MOSFET (Metal Oxide)	Surface Mount	75 V	-55 °C	150 °C	22 mOhm	56.5 nC	8-PowerVDFN	3 V	2737 pF	900 mW	20 V	4.5 V 10 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP.