DMN7022LFGQ Series

NRND = Not Recommended for New Design

Catalog

NRND = Not Recommended for New Design

Part	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	FET Type	Technology	Mounting Type	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max) [Max]	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)
Diodes Inc DMN7022LFGQ-7	23 A	POWERDI3333-8	N-Channel	MOSFET (Metal Oxide)	Surface Mount	75 V	-55 °C	150 °C	22 mOhm	56.5 nC	8-PowerVDFN	3 V	2737 pF	2 W	20 V	4.5 V 10 V
Diodes Inc DMN7022LFG-7	7.8 A	POWERDI3333-8	N-Channel	MOSFET (Metal Oxide)	Surface Mount	75 V	-55 °C	150 °C	22 mOhm	56.5 nC	8-PowerVDFN	3 V	2737 pF	900 mW	20 V	4.5 V 10 V
Diodes Inc DMN7022LFGQ-13	23 A	POWERDI3333-8	N-Channel	MOSFET (Metal Oxide)	Surface Mount	75 V	-55 °C	150 °C	22 mOhm	56.5 nC	8-PowerVDFN	3 V	2737 pF	2 W	20 V	4.5 V 10 V
Diodes Inc DMN7022LFG-13	7.8 A	POWERDI3333-8	N-Channel	MOSFET (Metal Oxide)	Surface Mount	75 V	-55 °C	150 °C	22 mOhm	56.5 nC	8-PowerVDFN	3 V	2737 pF	900 mW	20 V	4.5 V 10 V

NRND = Not Recommended for New Design

• 100% Unclamped Inductive Switching – Ensures More Reliable and Robust End Application

• Low RDS(ON) – Ensures On-State Losses are Minimized

• Small form factor thermally efficient package enables higher density end products

• Occupies just 33% of the board area occupied by SO-8 enabling smaller end product

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP.