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IPI80N06S2L11AKSA1

IPI80N06S2L11AKSA1

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INFINEON

MOSFET N-CH 55V 80A TO262-3

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IPI80N06S2L11AKSA1

IPI80N06S2L11AKSA1

Unknown
INFINEON

MOSFET N-CH 55V 80A TO262-3

Find alt

Description

General part information

IPI80N Series

N-Channel 55 V 80A (Tc) 158W (Tc) Through Hole PG-TO262-3

Technical Specifications

Parameters and characteristics for this part

SpecificationIPI80N06S2L11AKSA1
Current - Continuous Drain (Id) (Tc)80 A
Drain to Source Voltage (Vdss)55 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)80 nC, 80 nC
GradeAutomotive
Input Capacitance (Ciss) (Max)2075 pF
Mounting TypeThrough Hole
Operating Temperature (Max)175 °C
Operating Temperature (Min)-55 °C
Package / CaseTO-262AA, I2PAK, TO-262-3 Long Leads
Package NamePG-TO262-3
Power Dissipation (Max)158 W
QualificationAEC-Q101
Rds On (Max)11 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)2 V

Pricing

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CAD

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Documents

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