IPI80N Series
Manufacturer: INFINEON
MOSFET N-CH 55V 80A TO262-3
| Part | Technology | Rds On (Max) | Input Capacitance (Ciss) (Max) | Current - Continuous Drain (Id) (Tc) | Drain to Source Voltage (Vdss) | Gate Charge (Max) | Package Name | Package / Case | Drive Voltage (Max Rds On, Min Rds On) | Operating Temperature (Min) | Operating Temperature (Max) | Mounting Type | FET Type | Qualification | Vgs(th) (Max) | Vgs (Max) | Grade | Power Dissipation (Max) | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
INFINEON | MOSFET (Metal Oxide) | 8 mOhm 8 mOhm | 2860 pF 2860 pF | 80 A | 55 V | 96 nC | PG-TO262-3 | I2PAK TO-262-3 Long Leads TO-262AA | 10 V | -55 °C | 175 °C | Through Hole | N-Channel | AEC-Q101 | 4 V | 20 V | Automotive | 215 W | ||
INFINEON | MOSFET (Metal Oxide) | 11 mOhm | 2075 pF | 80 A | 55 V | 80 nC 80 nC | PG-TO262-3 | I2PAK TO-262-3 Long Leads TO-262AA | 10 V | -55 °C | 175 °C | Through Hole | N-Channel | AEC-Q101 | 2 V | 20 V | Automotive | 158 W | ||
INFINEON | MOSFET (Metal Oxide) | 7.4 mOhm | 4500 pF | 80 A | 60 V | 56 nC | PG-TO262-3 | I2PAK TO-262-3 Long Leads TO-262AA | 10 V | -55 °C | 175 °C | Through Hole | N-Channel | AEC-Q101 | 4 V | 20 V | Automotive | 79 W | ||
INFINEON | MOSFET (Metal Oxide) | 3.5 mOhm | 7300 pF | 80 A | 40 V | 110 nC | PG-TO262-3 | I2PAK TO-262-3 Long Leads TO-262AA | 10 V | -55 °C | 175 °C | Through Hole | N-Channel | AEC-Q101 | 4 V | 20 V | Automotive | 188 W | ||
INFINEON | MOSFET (Metal Oxide) | 4.8 mOhm | 5700 pF | 80 A | 55 V | 230 nC | PG-TO262-3-1 | I2PAK TO-262-3 Long Leads TO-262AA | 10 V | -55 °C | 175 °C | Through Hole | N-Channel | 2 V | 20 V | 300 W | ||||
INFINEON | MOSFET (Metal Oxide) | 2.7 mOhm | 9750 pF | 80 A | 30 V | 140 nC | PG-TO262-3 | I2PAK TO-262-3 Long Leads TO-262AA | -55 °C | 175 °C | Through Hole | N-Channel | AEC-Q101 | 2.2 V | 16 V | Automotive | 136 W | 10 V | 4.5 V | |
INFINEON | MOSFET (Metal Oxide) | 5.7 mOhm | 6500 pF | 80 A | 60 V | 81 nC | PG-TO262-3 | I2PAK TO-262-3 Long Leads TO-262AA | 10 V | -55 °C | 175 °C | Through Hole | N-Channel | AEC-Q101 | 4 V | 20 V | Automotive | 107 W | ||
INFINEON | MOSFET (Metal Oxide) | 10.7 mOhm | 2075 pF | 80 A | 55 V | 80 nC 80 nC | PG-TO262-3-1 | I2PAK TO-262-3 Long Leads TO-262AA | 10 V | -55 °C | 175 °C | Through Hole | N-Channel | 2 V | 20 V | 158 W | ||||
INFINEON | MOSFET (Metal Oxide) | 4.8 mOhm | 5700 pF | 80 A | 55 V | 230 nC | PG-TO262-3 | I2PAK TO-262-3 Long Leads TO-262AA | 10 V | -55 °C | 175 °C | Through Hole | N-Channel | AEC-Q101 | 2 V | 20 V | Automotive | 300 W | ||
INFINEON | MOSFET (Metal Oxide) | 5.4 mOhm | 10760 pF | 80 A | 55 V | 240 nC | PG-TO262-3 | I2PAK TO-262-3 Long Leads TO-262AA | 10 V | -55 °C | 175 °C | Through Hole | N-Channel | AEC-Q101 | 4 V | 20 V | Automotive | 165 W |