SPU07N60C3BKMA1

Obsolete

Infineon Technologies

MOSFET N-CH 650V 7.3A TO251-3

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Obsolete

Infineon Technologies

MOSFET N-CH 650V 7.3A TO251-3

Technical Specifications

Parameters and characteristics for this part

Specification	SPU07N60C3BKMA1

Current - Continuous Drain (Id) @ 25°C	7.3 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	27 nC
Input Capacitance (Ciss) (Max) @ Vds	790 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	IPAK, TO-251-3 Short Leads, TO-251AA
Power Dissipation (Max)	83 W
Rds On (Max) @ Id, Vgs [Max]	600 mOhm
Supplier Device Package	PG-TO251-3-21
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.9 V

Part	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Technology	Package / Case	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs [Max]	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Mounting Type	FET Type
Infineon Technologies SPU07N60C3BKMA1	PG-TO251-3-21	27 nC	7.3 A	83 W	790 pF	MOSFET (Metal Oxide)	IPAK TO-251-3 Short Leads TO-251AA	20 V	-55 °C	150 °C	10 V	600 mOhm	3.9 V	650 V	Through Hole	N-Channel

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 650 V 7.3A (Tc) 83W (Tc) Through Hole PG-TO251-3-21

Technical documentation and resources

No documents available