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MOSFET N-CH 650V 7.3A TO251-3
| Part | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs [Max] | Current - Continuous Drain (Id) @ 25°C | Power Dissipation (Max) | Input Capacitance (Ciss) (Max) @ Vds | Technology | Package / Case | Vgs (Max) | Operating Temperature [Min] | Operating Temperature [Max] | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs [Max] | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) | Mounting Type | FET Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | PG-TO251-3-21 | 27 nC | 7.3 A | 83 W | 790 pF | MOSFET (Metal Oxide) | IPAK TO-251-3 Short Leads TO-251AA | 20 V | -55 °C | 150 °C | 10 V | 600 mOhm | 3.9 V | 650 V | Through Hole | N-Channel |