Specification	WNSC2D06650DJ

Capacitance	198 pF
Current - Average Rectified (Io)	6 A
Current - Reverse Leakage	30 µA
Mounting Type	Surface Mount
Operating Temperature - Junction	175 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Package Name	DPak
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Speed - Fast Recovery (Minimum)	500 mA
Speed - Recovery Current	500 mA, 500 mA
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)	650 V
Voltage - Forward (Vf) (Max)	1.7 V, 1.7 V

WNSC2 Series

Part	Speed - Fast Recovery (Minimum)	Speed	Speed - Recovery Current	Capacitance	Current - Reverse Leakage	Package / Case	Voltage - Forward (Vf) (Max)	Mounting Type	Package Name	Current - Average Rectified (Io)	Technology	Voltage - DC Reverse (Vr) (Max)	Reverse Recovery Time (trr)	Operating Temperature - Junction	Package Width	Package Length	Drain to Source Voltage (Vdss)	Operating Temperature (Min)	Operating Temperature (Max)	Vgs(th) (Max)	Input Capacitance (Ciss) (Max)	Power Dissipation (Max)	Current - Continuous Drain (Id) (Ta)	Rds On (Max)	Vgs (Max) Positive	Vgs (Max) Negative	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Gate Charge (Max)	FET Type	Current - Average Rectified (Io) (per Diode)	Diode Pair Count	Diode Configuration
WeEn Semiconductors WNSC2D03650MBJ	500 mA	No Recovery Time	500 mA 500 mA	130 pF	20 µA	DO-214AA SMB	1.7 V	Surface Mount	SMB	3 A	SiC (Silicon Carbide) Schottky	650 V	0 ns	175 °C
WeEn Semiconductors WNSC2D08650TJ	500 mA	No Recovery Time	500 mA 500 mA	260 pF	40 µA	4-VSFN Exposed Pad	1.7 V	Surface Mount	5-DFN	8 A	SiC (Silicon Carbide) Schottky	650 V	0 ns	175 °C	8 mm	8 mm
WeEn Semiconductors WNSC2D201200W6Q	500 mA	No Recovery Time	500 mA 500 mA	845 pF	200 µA	TO-247-2	1.8 V	Through Hole	TO-247-2	20 A	SiC (Silicon Carbide) Schottky	1200 V	0 ns	175 °C
WeEn Semiconductors WNSC2D021200D6J	500 mA	No Recovery Time	500 mA 500 mA	95 pF	10 µA	DPAK (2 Leads + Tab) SC-63 TO-252-3	1.65 V	Surface Mount	DPak	2 A	SiC (Silicon Carbide) Schottky	1200 V	0 ns	175 °C
WeEn Semiconductors WNSC2M1K0170WQ						TO-247-3		Through Hole	TO-247-3		MOSFET (Metal Oxide)						1700 V	-55 °C	175 °C	4.2 V	225 pF	79 W	7 A	1 Ohm	22 V	-10 V	18 V	15 V	12 nC	N-Channel
WeEn Semiconductors WNSC2D10650WQ	500 mA	No Recovery Time	500 mA 500 mA	310 pF	50 µA	TO-247-2	1.7 V	Through Hole	TO-247-2	10 A	SiC (Silicon Carbide) Schottky	650 V	0 ns	175 °C
WeEn Semiconductors WNSC2D20650CJQ	500 mA	No Recovery Time	500 mA 500 mA		50 µA	SC-65-3 TO-3P-3	1.7 V	Through Hole	TO-3PF		SiC (Silicon Carbide) Schottky	650 V	0 ns	175 °C																	20 A	1 pair	Common Cathode
WeEn Semiconductors WNSC2D151200W6Q	500 mA	No Recovery Time	500 mA 500 mA	700 pF	150 µA	TO-247-2	1.7 V	Through Hole	TO-247-2	15 A	SiC (Silicon Carbide) Schottky	1200 V	0 ns	175 °C
WeEn Semiconductors WNSC2D101200WQ	500 mA	No Recovery Time	500 mA 500 mA	490 pF	110 µA	TO-247-2	1.65 V	Through Hole	TO-247-2	10 A	SiC (Silicon Carbide) Schottky	1200 V	0 ns	175 °C
WeEn Semiconductors WNSC2D06650XQ	500 mA	No Recovery Time	500 mA 500 mA	198 pF	30 µA	Isolated Tab TO-220-2 Full Pack	1.7 V 1.7 V	Through Hole	TO-220F	6 A	SiC (Silicon Carbide) Schottky	650 V	0 ns	175 °C

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