WNSC2D03650MBJ

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WeEn Semiconductors

DIODE SIL CARBIDE 650V 3A SMB

WNSC2D03650MBJ

Active

WeEn Semiconductors

DIODE SIL CARBIDE 650V 3A SMB

Description Specifications Series Pricing CAD Documents

Description

General part information

WNSC2 Series

Diode 650 V 3A Surface Mount SMB

Technical Specifications

Parameters and characteristics for this part

Specification	WNSC2D03650MBJ

Capacitance	130 pF
Current - Average Rectified (Io)	3 A
Current - Reverse Leakage	20 µA
Mounting Type	Surface Mount
Operating Temperature - Junction	175 °C
Package / Case	SMB, DO-214AA
Package Name	SMB
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Speed - Fast Recovery (Minimum)	500 mA
Speed - Recovery Current	500 mA, 500 mA
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)	650 V
Voltage - Forward (Vf) (Max)	1.7 V

WNSC2 Series

Part	Speed - Fast Recovery (Minimum)	Speed	Speed - Recovery Current	Capacitance	Current - Reverse Leakage	Package / Case	Voltage - Forward (Vf) (Max)	Mounting Type	Package Name	Current - Average Rectified (Io)	Technology	Voltage - DC Reverse (Vr) (Max)	Reverse Recovery Time (trr)	Operating Temperature - Junction	Package Width	Package Length	Drain to Source Voltage (Vdss)	Operating Temperature (Min)	Operating Temperature (Max)	Vgs(th) (Max)	Input Capacitance (Ciss) (Max)	Power Dissipation (Max)	Current - Continuous Drain (Id) (Ta)	Rds On (Max)	Vgs (Max) Positive	Vgs (Max) Negative	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Gate Charge (Max)	FET Type	Current - Average Rectified (Io) (per Diode)	Diode Pair Count	Diode Configuration
WeEn Semiconductors WNSC2D03650MBJ	500 mA	No Recovery Time	500 mA 500 mA	130 pF	20 µA	DO-214AA SMB	1.7 V	Surface Mount	SMB	3 A	SiC (Silicon Carbide) Schottky	650 V	0 ns	175 °C
WeEn Semiconductors WNSC2D08650TJ	500 mA	No Recovery Time	500 mA 500 mA	260 pF	40 µA	4-VSFN Exposed Pad	1.7 V	Surface Mount	5-DFN	8 A	SiC (Silicon Carbide) Schottky	650 V	0 ns	175 °C	8 mm	8 mm
WeEn Semiconductors WNSC2D201200W6Q	500 mA	No Recovery Time	500 mA 500 mA	845 pF	200 µA	TO-247-2	1.8 V	Through Hole	TO-247-2	20 A	SiC (Silicon Carbide) Schottky	1200 V	0 ns	175 °C
WeEn Semiconductors WNSC2D021200D6J	500 mA	No Recovery Time	500 mA 500 mA	95 pF	10 µA	DPAK (2 Leads + Tab) SC-63 TO-252-3	1.65 V	Surface Mount	DPak	2 A	SiC (Silicon Carbide) Schottky	1200 V	0 ns	175 °C
WeEn Semiconductors WNSC2M1K0170WQ						TO-247-3		Through Hole	TO-247-3		MOSFET (Metal Oxide)						1700 V	-55 °C	175 °C	4.2 V	225 pF	79 W	7 A	1 Ohm	22 V	-10 V	18 V	15 V	12 nC	N-Channel
WeEn Semiconductors WNSC2D10650WQ	500 mA	No Recovery Time	500 mA 500 mA	310 pF	50 µA	TO-247-2	1.7 V	Through Hole	TO-247-2	10 A	SiC (Silicon Carbide) Schottky	650 V	0 ns	175 °C
WeEn Semiconductors WNSC2D20650CJQ	500 mA	No Recovery Time	500 mA 500 mA		50 µA	SC-65-3 TO-3P-3	1.7 V	Through Hole	TO-3PF		SiC (Silicon Carbide) Schottky	650 V	0 ns	175 °C																	20 A	1 pair	Common Cathode
WeEn Semiconductors WNSC2D151200W6Q	500 mA	No Recovery Time	500 mA 500 mA	700 pF	150 µA	TO-247-2	1.7 V	Through Hole	TO-247-2	15 A	SiC (Silicon Carbide) Schottky	1200 V	0 ns	175 °C
WeEn Semiconductors WNSC2D101200WQ	500 mA	No Recovery Time	500 mA 500 mA	490 pF	110 µA	TO-247-2	1.65 V	Through Hole	TO-247-2	10 A	SiC (Silicon Carbide) Schottky	1200 V	0 ns	175 °C
WeEn Semiconductors WNSC2D06650XQ	500 mA	No Recovery Time	500 mA 500 mA	198 pF	30 µA	Isolated Tab TO-220-2 Full Pack	1.7 V 1.7 V	Through Hole	TO-220F	6 A	SiC (Silicon Carbide) Schottky	650 V	0 ns	175 °C

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