PMV65XPEAR

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Nexperia USA Inc.

TRANS MOSFET P-CH 20V 3.3A 3-PIN TO-236AB T/R

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PMV65XPEAR

Active

Nexperia USA Inc.

TRANS MOSFET P-CH 20V 3.3A 3-PIN TO-236AB T/R

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Description Specifications Series Pricing CAD Documents

Description

General part information

PMV65XPEA Series

P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Technical Specifications

Parameters and characteristics for this part

Specification	PMV65XPEAR

Current - Continuous Drain (Id) (Ta)	2.8 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On)	2.5 V
Drive Voltage (Min Rds On)	4.5 V
FET Type	P-Channel
Gate Charge (Max)	9 nC
Grade	Automotive
Input Capacitance (Ciss) (Max)	618 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-236-3, SOT-23-3, SC-59
Package Name	TO-236AB
Power Dissipation (Max)	6.25 W, 480 mW
Qualification	AEC-Q101
Rds On (Max)	78 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max)	1.25 V

PMV65XPEA Series

20 V, P-channel Trench MOSFET

Part	Mounting Type	Operating Temperature (Min)	Operating Temperature (Max)	Power Dissipation (Max)	Grade	Gate Charge (Max)	Vgs (Max)	Vgs(th) (Max)	Package Name	Rds On (Max)	Package / Case	Drive Voltage (Max Rds On)	Drive Voltage (Min Rds On)	Qualification	Technology	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max)	Current - Continuous Drain (Id) (Ta)	FET Type
Nexperia USA Inc. PMV65XPEAR	Surface Mount	-55 °C	150 °C	6.25 W 480 mW	Automotive	9 nC	12 V	1.25 V	TO-236AB	78 mOhm	SC-59 SOT-23-3 TO-236-3	2.5 V	4.5 V	AEC-Q101	MOSFET (Metal Oxide)	20 V	618 pF	2.8 A	P-Channel