Catalog
20 V, P-channel Trench MOSFET
Description
AI
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Beta
⌘K
20 V, P-channel Trench MOSFET
20 V, P-channel Trench MOSFET
| Part | Mounting Type | Operating Temperature (Min) | Operating Temperature (Max) | Power Dissipation (Max) | Grade | Gate Charge (Max) | Vgs (Max) | Vgs(th) (Max) | Package Name | Rds On (Max) | Package / Case | Drive Voltage (Max Rds On) | Drive Voltage (Min Rds On) | Qualification | Technology | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) | Current - Continuous Drain (Id) (Ta) | FET Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | Surface Mount | -55 °C | 150 °C | 6.25 W 480 mW | Automotive | 9 nC | 12 V | 1.25 V | TO-236AB | 78 mOhm | SC-59 SOT-23-3 TO-236-3 | 2.5 V | 4.5 V | AEC-Q101 | MOSFET (Metal Oxide) | 20 V | 618 pF | 2.8 A | P-Channel |