DMP1070UCA3-7
ObsoleteDiodes Inc
P-CHANNEL ENHANCEMENT MODE MOSFET
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DMP1070UCA3-7
ObsoleteDiodes Inc
P-CHANNEL ENHANCEMENT MODE MOSFET
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | DMP1070UCA3-7 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 3.6 A |
| Drain to Source Voltage (Vdss) | 12 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5 V, 1.5 V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 1.45 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 147 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 3-XFDFN |
| Power Dissipation (Max) [Max] | 710 mW |
| Rds On (Max) @ Id, Vgs | 70 mOhm |
| Supplier Device Package | X4-DSN0607-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) [Max] | -6 V |
| Vgs(th) (Max) @ Id | 950 mV |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
DMP1070UCA3 Series
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
Documents
Technical documentation and resources