P-Channel Enhancement Mode MOSFET
P-Channel Enhancement Mode MOSFET
| Part | Technology | FET Type | Current - Continuous Drain (Id) @ 25°C | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) [Max] | Vgs(th) (Max) @ Id | Drive Voltage (Max Rds On, Min Rds On) | Mounting Type | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs | Supplier Device Package | Vgs (Max) [Max] | Gate Charge (Qg) (Max) @ Vgs | Package / Case | Operating Temperature [Min] | Operating Temperature [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Diodes Inc | MOSFET (Metal Oxide) | P-Channel | 3.6 A | 147 pF | 710 mW | 950 mV | 1.5 V 4.5 V | Surface Mount | 12 V | 70 mOhm | X4-DSN0607-3 | -6 V | 1.45 nC | 3-XFDFN | -55 °C | 150 °C |
Diodes Inc | MOSFET (Metal Oxide) | P-Channel | 3.6 A | 147 pF | 710 mW | 950 mV | 1.5 V 4.5 V | Surface Mount | 12 V | 70 mOhm | X4-DSN0607-3 | -6 V | 1.45 nC | 3-XFDFN | -55 °C | 150 °C |