SSM3J338R,LF

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Toshiba Semiconductor and Storage

MOSFET P-CH 12V 6A SOT23F

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Toshiba Semiconductor and Storage

MOSFET P-CH 12V 6A SOT23F

Technical Specifications

Parameters and characteristics for this part

Specification	SSM3J338R,LF

Current - Continuous Drain (Id) @ 25°C	6 A
Drain to Source Voltage (Vdss)	12 V
Drive Voltage (Max Rds On, Min Rds On)	1.8 V, 8 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	19.5 nC
Input Capacitance (Ciss) (Max) @ Vds	1400 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-23-3 Flat Leads
Power Dissipation (Max)	1 W
Rds On (Max) @ Id, Vgs	17.6 mOhm
Supplier Device Package	SOT-23F
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V
Vgs(th) (Max) @ Id	1 V

Part	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Operating Temperature	Power Dissipation (Max)	Package / Case	Technology	Vgs (Max)	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Mounting Type	Vgs(th) (Max) @ Id
Toshiba Semiconductor and Storage SSM3J338R,LF	19.5 nC	1400 pF	SOT-23F	6 A	17.6 mOhm	150 °C	1 W	SOT-23-3 Flat Leads	MOSFET (Metal Oxide)	10 V	12 V	1.8 V 8 V	P-Channel	Surface Mount	1 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 12 V 6A (Ta) 1W (Ta) Surface Mount SOT-23F

Technical documentation and resources

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