SSM3J338 Series
Manufacturer: Toshiba Semiconductor and Storage
HIGH-SPEED, LOW-LOSS SOLUTIONS | TOSHIBA MOSFETS, P-CH MOSFET, -12 V, -6.0 A, 0.0202 Ω@4.5V, SOT-23F
| Part | Technology | Vgs(th) (Max) | Package / Case | Drain to Source Voltage (Vdss) | FET Type | Power Dissipation (Max) | Current - Continuous Drain (Id) (Ta) | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | Rds On (Max) | Mounting Type | Vgs (Max) | Gate Charge (Max) | Package Name | Operating Temperature | Input Capacitance (Ciss) (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | MOSFET (Metal Oxide) | 1 V | SOT-23-3 Flat Leads | 12 V | P-Channel | 1 W | 6 A | 8 V | 1.8 V | 17.6 mOhm | Surface Mount | 10 V | 19.5 nC | SOT-23F | 150 °C | 1400 pF |