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MOSFET P-CH 12V 6A SOT23F
| Part | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Supplier Device Package | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Operating Temperature | Power Dissipation (Max) | Package / Case | Technology | Vgs (Max) | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) | FET Type | Mounting Type | Vgs(th) (Max) @ Id |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 19.5 nC | 1400 pF | SOT-23F | 6 A | 17.6 mOhm | 150 °C | 1 W | SOT-23-3 Flat Leads | MOSFET (Metal Oxide) | 10 V | 12 V | 1.8 V 8 V | P-Channel | Surface Mount | 1 V |