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STL8N6F7

STL8N6F7

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STMicroelectronics

N-CHANNEL 60 V, 0.019 OHM TYP., 8 A STRIPFET F7 POWER MOSFET IN A POWERFLAT 3.3X3.3 PACKAGE

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STL8N6F7

STL8N6F7

Active
STMicroelectronics

N-CHANNEL 60 V, 0.019 OHM TYP., 8 A STRIPFET F7 POWER MOSFET IN A POWERFLAT 3.3X3.3 PACKAGE

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Description

General part information

STL8 Series

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

Technical Specifications

Parameters and characteristics for this part

SpecificationSTL8N6F7
Current - Continuous Drain (Id) (Tc)36 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)8 nC
Input Capacitance (Ciss) (Max)450 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / Case8-PowerVDFN
Package Length3.3 mm
Package NamePowerFlat™
Package Width3.3 mm
Power Dissipation (Max)60 W, 3 W
Rds On (Max)25 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)4 V

Pricing

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CAD

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