STL8N6LF3

Obsolete

STMicroelectronics

MOSFET N-CH 60V 20A POWERFLAT

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STL8N6LF3

Obsolete

STMicroelectronics

MOSFET N-CH 60V 20A POWERFLAT

Deep-Dive with AI

DocumentsDatasheet

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STL8N6LF3

Current - Continuous Drain (Id) @ 25°C	20 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	10 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	13 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	668 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerVDFN
Power Dissipation (Max)	65 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	30 mOhm
Supplier Device Package	PowerFlat™ (5x6)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

STL8N10F7 Series

N-channel 60 V, 0.019 Ohm typ., 8 A STripFET F7 Power MOSFET in a PowerFLAT 3.3x3.3 package

Part	Current - Continuous Drain (Id) @ 25°C	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Supplier Device Package	Package / Case	FET Type	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Qualification	Drain to Source Voltage (Vdss)	Grade	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package [x]	Supplier Device Package [y]
STMicroelectronics STL8N6LF3	20 A	MOSFET (Metal Oxide)	13 nC	2.5 V	10 V	5 V	PowerFlat™ (5x6)	8-PowerVDFN	N-Channel	20 V	668 pF	30 mOhm	AEC-Q101	60 V	Automotive	65 W	-55 °C	175 ░C	Surface Mount
STMicroelectronics STL8N6F7	36 A	MOSFET (Metal Oxide)		4 V			PowerFlat™ (3.3x3.3)	8-PowerVDFN	N-Channel	20 V		25 mOhm		60 V		3 W 60 W	-55 °C	150 °C	Surface Mount	10 V	450 pF	8 nC	3.3	3.3
STMicroelectronics STL8N10F7	35 A	MOSFET (Metal Oxide)	22 nC	4.5 V			PowerFlat™ (3.3x3.3)	8-PowerVDFN	N-Channel	20 V	2000 pF	20 mOhm		100 V		3.5 W 50 W	-55 °C	150 °C	Surface Mount	10 V			3.3	3.3

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

STL8N10F7 Series

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

Documents

Technical documentation and resources