Specification	IRF2805STRLPBF

Current - Continuous Drain (Id) (Tc)	135 A
Drain to Source Voltage (Vdss)	55 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	230 nC
Input Capacitance (Ciss) (Max)	5110 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Package Name	D2PAK
Power Dissipation (Max)	200 W
Rds On (Max)	4.7 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4 V

IRF2805 Series

Part	Current - Continuous Drain (Id) (Tc)	Input Capacitance (Ciss) (Max)	Mounting Type	Power Dissipation (Max)	Gate Charge (Max)	Package / Case	FET Type	Technology	Vgs (Max)	Package Name	Drain to Source Voltage (Vdss)	Operating Temperature (Min)	Operating Temperature (Max)	Vgs(th) (Max)	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max)
INFINEON IRF2805STRLPBF	135 A	5110 pF	Surface Mount	200 W	230 nC	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	N-Channel	MOSFET (Metal Oxide)	20 V	D2PAK	55 V	-55 °C	175 °C	4 V	10 V	4.7 mOhm
INFINEON IRF2805PBF	75 A	5110 pF	Through Hole	330 W	230 nC	TO-220-3	N-Channel	MOSFET (Metal Oxide)	20 V	TO-220AB	55 V	-55 °C	175 °C	4 V	10 V	4.7 mOhm
INFINEON IRF2805PBF	75 A	5110 pF	Through Hole	330 W	230 nC	TO-220-3	N-Channel	MOSFET (Metal Oxide)	20 V	TO-220AB	55 V	-55 °C	175 °C	4 V	10 V	4.7 mOhm

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