IRF2805 Series
Manufacturer: INFINEON
Beta
⌘K
IR MOSFET™ N-CHANNEL POWER MOSFET ; D2PAK TO-263 PACKAGE; 4.7 MOHM; WIDE SOA
| Part | Current - Continuous Drain (Id) (Tc) | Input Capacitance (Ciss) (Max) | Mounting Type | Power Dissipation (Max) | Gate Charge (Max) | Package / Case | FET Type | Technology | Vgs (Max) | Package Name | Drain to Source Voltage (Vdss) | Operating Temperature (Min) | Operating Temperature (Max) | Vgs(th) (Max) | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 INFINEON | 135 A | 5110 pF | Surface Mount | 200 W | 230 nC | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | N-Channel | MOSFET (Metal Oxide) | 20 V | D2PAK | 55 V | -55 °C | 175 °C | 4 V | 10 V | 4.7 mOhm |
 INFINEON | 75 A | 5110 pF | Through Hole | 330 W | 230 nC | TO-220-3 | N-Channel | MOSFET (Metal Oxide) | 20 V | TO-220AB | 55 V | -55 °C | 175 °C | 4 V | 10 V | 4.7 mOhm |
INFINEON | 75 A | 5110 pF | Through Hole | 330 W | 230 nC | TO-220-3 | N-Channel | MOSFET (Metal Oxide) | 20 V | TO-220AB | 55 V | -55 °C | 175 °C | 4 V | 10 V | 4.7 mOhm |