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IXTA110N055T7 - TO-263-7

IXTA110N055T7

Obsolete
IXYS

MOSFET N-CH 55V 110A TO263-7

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IXTA110N055T7 - TO-263-7

IXTA110N055T7

Obsolete
IXYS

MOSFET N-CH 55V 110A TO263-7

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIXTA110N055T7
Current - Continuous Drain (Id) @ 25°C110 A
Drain to Source Voltage (Vdss)55 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Input Capacitance (Ciss) (Max) @ Vds3080 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseTO-263-7, D2PAK
Power Dissipation (Max) [Max]230 W
Rds On (Max) @ Id, Vgs7 mOhm
Supplier Device PackageTO-263-7 (IXTA)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$

Description

General part information

IXTA110 Series

N-Channel 55 V 110A (Tc) 230W (Tc) Surface Mount TO-263-7 (IXTA)

Documents

Technical documentation and resources

No documents available