MOSFET N-CH 55V 110A TO263-7
| Part | Package / Case | Current - Continuous Drain (Id) @ 25°C | Power Dissipation (Max) [Max] | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Technology | Operating Temperature [Min] | Operating Temperature [Max] | Mounting Type | FET Type | Rds On (Max) @ Id, Vgs | Supplier Device Package | Drain to Source Voltage (Vdss) | Gate Charge (Qg) (Max) @ Vgs [Max] | Gate Charge (Qg) (Max) @ Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IXYS | D2PAK TO-263-7 | 110 A | 230 W | 3080 pF | 20 V | 10 V | 4 V | MOSFET (Metal Oxide) | -55 °C | 175 ░C | Surface Mount | N-Channel | 7 mOhm | TO-263-7 (IXTA) | 55 V | ||
IXYS | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 110 A | 517 W | 6570 pF | 20 V | 10 V | 4.5 V | MOSFET (Metal Oxide) | -55 °C | 175 ░C | Surface Mount | N-Channel | 14 mOhm | TO-263AA | 120 V | 120 nC | |
IXYS | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 110 A | 230 W | 3080 pF | 20 V | 10 V | 4 V | MOSFET (Metal Oxide) | -55 °C | 175 ░C | Surface Mount | N-Channel | 7 mOhm | TO-263AA | 55 V | ||
IXYS | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 110 A | 390 W | 2210 pF | 20 V | 10 V | 5.5 V | MOSFET (Metal Oxide) | -55 °C | 175 ░C | Surface Mount | N-Channel | 13.5 mOhm | TO-263AA | 55 V | 76 nC |