2ED2109S06FXUMA1 is a 650V half-bridge gate driver with an integrated bootstrap diode. It is a high voltage, high-speed power MOSFET and IGBT driver with independent high and low side referenced output channels. There are not any parasitic thyristor structures present in the device, hence no parasitic latch-up may occur at all temperature and voltage conditions. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET, SiC MOSFET, or IGBT in the high-side configuration, which operates up to 650V.