2ED2109 Series
Manufacturer: INFINEON
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THE 2ED2109S06F IS A 650 V 0.7 A HALF-BRIDGE HIGH SPEED POWER MOSFET AND IGBT GATE DRIVER IN DSO-8 PACKAGE
| Part | Voltage - Supply (Minimum) | Voltage - Supply (Maximum) | Gate Channel | Gate Type | Package Name | High Side Voltage - Max (Bootstrap) | Driven Configuration | Mounting Type | Number of Drivers | Operating Temperature (Max) | Operating Temperature (Min) | Logic Voltage - VIL | Logic Voltage - VIH | Rise Time (Typ) | Fall Time (Typ) | Channel Type | Current - Peak Output (Sink) | Current - Peak Output (Source) | Package Length | Package Width | Input Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 INFINEON | 10 VDC | 20 V | N-Channel | IGBT MOSFET N-Channel MOSFET | 8-SOIC PG-DSO-8-53 | 650 V | Half-Bridge | Surface Mount | 1 2 | 125 °C | -40 °C | 1.1 V | 1.7 V | 100 ns | 35 ns | Synchronous | 700 mA | 290 mA | 0.154 in | 3.9 mm | Non-Inverting |