ZVP4525E6TA

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Diodes Inc

P-CHANNEL ENHANCEMENT MODE MOSFET

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Diodes Inc

P-CHANNEL ENHANCEMENT MODE MOSFET

Technical Specifications

Parameters and characteristics for this part

Specification	ZVP4525E6TA

Current - Continuous Drain (Id) @ 25°C	197 mA
Drain to Source Voltage (Vdss)	250 V
Drive Voltage (Max Rds On, Min Rds On)	3.5 V, 10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	3.45 nC
Input Capacitance (Ciss) (Max) @ Vds	73 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-6
Power Dissipation (Max)	1.1 W
Rds On (Max) @ Id, Vgs [Max]	14 Ohm
Supplier Device Package	SOT-23-6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	40 V
Vgs(th) (Max) @ Id	2 V

P-Channel Enhancement Mode MOSFET

Part	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs [Max]	Technology	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Power Dissipation (Max)	Vgs (Max)	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Package / Case
Diodes Inc ZVP4525ZTA	2 V	3.45 nC	250 V	-55 °C	150 °C	14 Ohm	MOSFET (Metal Oxide)	205 mA	3.5 V 10 V	P-Channel	1.2 W	40 V	SOT-89-3	73 pF	Surface Mount	TO-243AA
Diodes Inc ZVP4525E6TA	2 V	3.45 nC	250 V	-55 °C	150 °C	14 Ohm	MOSFET (Metal Oxide)	197 mA	3.5 V 10 V	P-Channel	1.1 W	40 V	SOT-23-6	73 pF	Surface Mount	SOT-23-6

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General part information

P-Channel Enhancement Mode MOSFET

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