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P-Channel Enhancement Mode MOSFET
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P-Channel Enhancement Mode MOSFET
P-Channel Enhancement Mode MOSFET
| Part | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Drain to Source Voltage (Vdss) | Operating Temperature [Min] | Operating Temperature [Max] | Rds On (Max) @ Id, Vgs [Max] | Technology | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | FET Type | Power Dissipation (Max) | Vgs (Max) | Supplier Device Package | Input Capacitance (Ciss) (Max) @ Vds | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Diodes Inc | 2 V | 3.45 nC | 250 V | -55 °C | 150 °C | 14 Ohm | MOSFET (Metal Oxide) | 205 mA | 3.5 V 10 V | P-Channel | 1.2 W | 40 V | SOT-89-3 | 73 pF | Surface Mount | TO-243AA |
Diodes Inc | 2 V | 3.45 nC | 250 V | -55 °C | 150 °C | 14 Ohm | MOSFET (Metal Oxide) | 197 mA | 3.5 V 10 V | P-Channel | 1.1 W | 40 V | SOT-23-6 | 73 pF | Surface Mount | SOT-23-6 |