STP13NK50Z

Obsolete

STMicroelectronics

MOSFET N-CH 500V 11A TO220AB

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Obsolete

STMicroelectronics

MOSFET N-CH 500V 11A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	STP13NK50Z

Current - Continuous Drain (Id) @ 25°C	11 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1600 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	140 W
Rds On (Max) @ Id, Vgs	480 mOhm
Supplier Device Package	TO-220
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.5 V

Part	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Technology	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Vgs (Max)	Package / Case	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max) [Max]
STMicroelectronics STP13NK50Z	140 W	10 V	500 V	4.5 V	MOSFET (Metal Oxide)	Through Hole	-55 °C	150 °C	N-Channel	30 V	TO-220-3	11 A	TO-220	480 mOhm	1600 pF
STMicroelectronics STP13NM50N		10 V	500 V	4 V	MOSFET (Metal Oxide)	Through Hole	-55 °C	150 °C	N-Channel	25 V	TO-220-3	12 A	TO-220	320 mOhm	960 pF	30 nC	100 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 500 V 11A (Tc) 140W (Tc) Through Hole TO-220

Technical documentation and resources