Beta
⌘K
MOSFET N-CH 500V 11A TO220AB
| Part | Power Dissipation (Max) | Drive Voltage (Max Rds On, Min Rds On) | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id | Technology | Mounting Type | Operating Temperature [Min] | Operating Temperature [Max] | FET Type | Vgs (Max) | Package / Case | Current - Continuous Drain (Id) @ 25°C | Supplier Device Package | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Power Dissipation (Max) [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
STMicroelectronics | 140 W | 10 V | 500 V | 4.5 V | MOSFET (Metal Oxide) | Through Hole | -55 °C | 150 °C | N-Channel | 30 V | TO-220-3 | 11 A | TO-220 | 480 mOhm | 1600 pF | ||
STMicroelectronics | 10 V | 500 V | 4 V | MOSFET (Metal Oxide) | Through Hole | -55 °C | 150 °C | N-Channel | 25 V | TO-220-3 | 12 A | TO-220 | 320 mOhm | 960 pF | 30 nC | 100 W |