IPL65R165CFDAUMA1

Obsolete

INFINEON

COOLMOS™ CFD2 N-CHANNEL SUPERJUNCTION MOSFET 650 V ; THINPAK 8X8 PACKAGE; 165 MOHM; FAST RECOVERY DIODE

IPL65R165CFDAUMA1

Obsolete

INFINEON

COOLMOS™ CFD2 N-CHANNEL SUPERJUNCTION MOSFET 650 V ; THINPAK 8X8 PACKAGE; 165 MOHM; FAST RECOVERY DIODE

Description Specifications Series Pricing CAD Documents

Description

General part information

IPL65R Series

Replacement for650V CoolMOS™ CFD2is600V CoolMOS™ CFD7 650V CoolMOS™ CFD2is Infineon's second generation of market leading high voltage CoolMOS™ MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and therefore better EMI behavior gives this product a clear advantage in comparison with competitor parts.

Technical Specifications

Parameters and characteristics for this part

Specification	IPL65R165CFDAUMA1

Current - Continuous Drain (Id) (Tc)	21.3 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	86 nC
Input Capacitance (Ciss) (Max)	2340 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-40 °C
Package / Case	4-PowerTSFN
Package Name	PG-VSON-4
Power Dissipation (Max)	195 W
Rds On (Max)	165 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4.5 V

IPL65R Series

Part	FET Type	Vgs (Max)	Package Name	Package / Case	Current - Continuous Drain (Id) (Tc)	Power Dissipation (Max)	Mounting Type	Vgs(th) (Max)	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature (Min)	Operating Temperature (Max)	Technology	Drain to Source Voltage (Vdss)	Rds On (Max)	Input Capacitance (Ciss) (Max)	Gate Charge (Max)
INFINEON IPL65R195C7AUMA1	N-Channel	20 V	PG-VSON-4	4-PowerTSFN	12 A	75 W	Surface Mount	4 V	10 V	-40 °C	150 °C	MOSFET (Metal Oxide)	650 V	195 mOhm	1150 pF	23 nC
INFINEON IPL65R190E6AUMA1	N-Channel	20 V	PG-VSON-4	4-PowerTSFN	20.2 A 20.2 A	151 W	Surface Mount	3.5 V	10 V	-40 °C	150 °C	MOSFET (Metal Oxide)	650 V	190 mOhm	1620 pF	73 nC
INFINEON IPL65R340CFDAUMA2	N-Channel	20 V	PG-VSON-4	4-PowerTSFN	10.9 A	104.2 W	Surface Mount	4.5 V	10 V	-40 °C	150 °C	MOSFET (Metal Oxide)	650 V	340 mOhm	1100 pF	41 nC
INFINEON IPL65R460CFDAUMA1	N-Channel	20 V	PG-VSON-4	4-PowerTSFN	8.3 A	83.3 W	Surface Mount	4.5 V	10 V	-40 °C	150 °C	MOSFET (Metal Oxide)	650 V	460 mOhm	870 pF	31.5 nC
INFINEON IPL65R165CFDAUMA1	N-Channel	20 V	PG-VSON-4	4-PowerTSFN	21.3 A	195 W	Surface Mount	4.5 V	10 V	-40 °C	150 °C	MOSFET (Metal Oxide)	650 V	165 mOhm	2340 pF	86 nC
INFINEON IPL65R165CFDAUMA2	N-Channel	20 V	PG-VSON-4	4-PowerTSFN	21.3 A	195 W	Surface Mount	4.5 V	10 V	-40 °C	150 °C	MOSFET (Metal Oxide)	650 V	165 mOhm	2340 pF	86 nC
INFINEON IPL65R660E6AUMA1	N-Channel	20 V	PG-VSON-4	4-PowerTSFN	7 A	63 W	Surface Mount	3.5 V	10 V	-40 °C	150 °C	MOSFET (Metal Oxide)	650 V	660 mOhm	440 pF	23 nC

Pricing

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CAD

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