IPL65R Series
Manufacturer: INFINEON
COOLMOS™ C7 N-CHANNEL SUPERJUNCTION MOSFET 650 V ; THINPAK 8X8 PACKAGE; 195 MOHM; HIGHEST PERFORMANCE
| Part | FET Type | Vgs (Max) | Package Name | Package / Case | Current - Continuous Drain (Id) (Tc) | Power Dissipation (Max) | Mounting Type | Vgs(th) (Max) | Drive Voltage (Max Rds On, Min Rds On) | Operating Temperature (Min) | Operating Temperature (Max) | Technology | Drain to Source Voltage (Vdss) | Rds On (Max) | Input Capacitance (Ciss) (Max) | Gate Charge (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
INFINEON | N-Channel | 20 V | PG-VSON-4 | 4-PowerTSFN | 12 A | 75 W | Surface Mount | 4 V | 10 V | -40 °C | 150 °C | MOSFET (Metal Oxide) | 650 V | 195 mOhm | 1150 pF | 23 nC |
INFINEON | N-Channel | 20 V | PG-VSON-4 | 4-PowerTSFN | 20.2 A 20.2 A | 151 W | Surface Mount | 3.5 V | 10 V | -40 °C | 150 °C | MOSFET (Metal Oxide) | 650 V | 190 mOhm | 1620 pF | 73 nC |
INFINEON | N-Channel | 20 V | PG-VSON-4 | 4-PowerTSFN | 10.9 A | 104.2 W | Surface Mount | 4.5 V | 10 V | -40 °C | 150 °C | MOSFET (Metal Oxide) | 650 V | 340 mOhm | 1100 pF | 41 nC |
INFINEON | N-Channel | 20 V | PG-VSON-4 | 4-PowerTSFN | 8.3 A | 83.3 W | Surface Mount | 4.5 V | 10 V | -40 °C | 150 °C | MOSFET (Metal Oxide) | 650 V | 460 mOhm | 870 pF | 31.5 nC |
INFINEON | N-Channel | 20 V | PG-VSON-4 | 4-PowerTSFN | 21.3 A | 195 W | Surface Mount | 4.5 V | 10 V | -40 °C | 150 °C | MOSFET (Metal Oxide) | 650 V | 165 mOhm | 2340 pF | 86 nC |
INFINEON | N-Channel | 20 V | PG-VSON-4 | 4-PowerTSFN | 21.3 A | 195 W | Surface Mount | 4.5 V | 10 V | -40 °C | 150 °C | MOSFET (Metal Oxide) | 650 V | 165 mOhm | 2340 pF | 86 nC |
INFINEON | N-Channel | 20 V | PG-VSON-4 | 4-PowerTSFN | 7 A | 63 W | Surface Mount | 3.5 V | 10 V | -40 °C | 150 °C | MOSFET (Metal Oxide) | 650 V | 660 mOhm | 440 pF | 23 nC |