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IDP30C65D2XKSA1 - TO-220-3

IDP30C65D2XKSA1

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Infineon Technologies

650 V, 30 A RAPID 2 EMITTER CONTROLLED POWER SILICON DIODE IN COMMON CATHODE CONFIGURATION IN A TO-220 PACKAGE

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IDP30C65D2XKSA1 - TO-220-3

IDP30C65D2XKSA1

Active
Infineon Technologies

650 V, 30 A RAPID 2 EMITTER CONTROLLED POWER SILICON DIODE IN COMMON CATHODE CONFIGURATION IN A TO-220 PACKAGE

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationIDP30C65D2XKSA1
Current - Average Rectified (Io) (per Diode)15 A
Current - Reverse Leakage @ Vr40 µA
Diode Configuration1 Pair Common Cathode
Mounting TypeThrough Hole
Operating Temperature - Junction [Max]175 ░C
Operating Temperature - Junction [Min]-40 °C
Package / CaseTO-220-3
Reverse Recovery Time (trr)31 ns
Speed200 mA, 500 ns
Supplier Device PackagePG-TO220-3
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]650 V
Voltage - Forward (Vf) (Max) @ If2.2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
ArrowN/A 500$ 0.77
DigikeyTube 1$ 2.59
10$ 2.15
100$ 1.71
500$ 1.45
1000$ 1.23
2000$ 1.17
5000$ 1.12

Description

General part information

IDP30C65 Series

Rapid 2switching 650 V, 30 A emitter controlledpower silicon diodesin common cathode configuration and in a TO-220 package, allowing design optimization for more compact dimensions, easier assembly and consequently lower costs.

Documents

Technical documentation and resources