650 V, 30 A RAPID 2 EMITTER CONTROLLED POWER SILICON DIODE IN COMMON CATHODE CONFIGURATION IN A TO-220 PACKAGE
| Part | Current - Reverse Leakage @ Vr | Current - Average Rectified (Io) (per Diode) | Mounting Type | Speed | Voltage - DC Reverse (Vr) (Max) [Max] | Reverse Recovery Time (trr) | Voltage - Forward (Vf) (Max) @ If | Package / Case | Operating Temperature - Junction [Min] | Operating Temperature - Junction [Max] | Diode Configuration | Technology | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 40 µA | 15 A | Through Hole | 200 mA 500 ns | 650 V | 31 ns | 2.2 V | TO-220-3 | -40 °C | 175 ░C | 1 Pair Common Cathode | Standard | PG-TO220-3 |