IRF9953TRPBF

Obsolete

INFINEON

IR MOSFET™ P+P DUAL ; SO-8 PACKAGE; 250 MOHM;

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IRF9953TRPBF

Obsolete

INFINEON

IR MOSFET™ P+P DUAL ; SO-8 PACKAGE; 250 MOHM;

Find alt

Alpha

Description Specifications Series Pricing CAD Documents

Description

General part information

IRF995 Series

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Technical Specifications

Parameters and characteristics for this part

Specification	IRF9953TRPBF

Channel Count	2
Configuration	P-Channel
Configuration - Features	Dual
Current - Continuous Drain (Id)	2.3 A
Drain to Source Voltage (Vdss)	30 V
Gate Charge (Max)	12 nC
Input Capacitance (Ciss) (Max)	190 pF, 190 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package Length	0.154 in
Package Name	8-SO, 8-SOIC
Package Width	3.9 mm
Power - Max	2 VA
Rds On (Max)	250 mOhm
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max)	1 V

IRF995 Series

Part	Gate Charge (Max)	Input Capacitance (Ciss) (Max)	Power - Max	Drain to Source Voltage (Vdss)	FET Feature	Package Length	Package Name	Package Width	Rds On (Max)	Vgs(th) (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Technology	Channel Count	Configuration	Configuration - Features	Mounting Type	Current - Continuous Drain (Id)	Current - Continuous Drain (Id) (Maximum)	Current - Continuous Drain (Id) (Typical)
INFINEON IRF9956PBF	14 nC	190 pF 190 pF	2 VA	30 V	Logic Level Gate	0.154 in	8-SO 8-SOIC	3.9 mm	100 mOhm	1 V	-55 °C	150 °C	MOSFET (Metal Oxide)	2	N-Channel	Dual	Surface Mount	3.5 A
INFINEON IRF9953PBF	12 nC	190 pF 190 pF	2 VA	30 V		0.154 in	8-SO 8-SOIC	3.9 mm	250 mOhm	1 V	-55 °C	150 °C	MOSFET (Metal Oxide)	2	P-Channel	Dual	Surface Mount	2.3 A
INFINEON IRF9952PBF	14 nC	190 pF 190 pF	2 VA	30 V	Logic Level Gate	0.154 in	8-SO 8-SOIC	3.9 mm	100 mOhm	1 V	-55 °C	150 °C	MOSFET (Metal Oxide)		N P-Channel		Surface Mount		2.3 A	3.5 A
INFINEON IRF9953TRPBF	12 nC	190 pF 190 pF	2 VA	30 V		0.154 in	8-SO 8-SOIC	3.9 mm	250 mOhm	1 V	-55 °C	150 °C	MOSFET (Metal Oxide)	2	P-Channel	Dual	Surface Mount	2.3 A
INFINEON IRF9953TR	12 nC	190 pF 190 pF	2 VA	30 V	Logic Level Gate	0.154 in	8-SO 8-SOIC	3.9 mm	250 mOhm	1 V	-55 °C	150 °C	MOSFET (Metal Oxide)	2	P-Channel	Dual	Surface Mount	2.3 A
INFINEON IRF9956TRPBF	14 nC	190 pF 190 pF	2 VA	30 V	Logic Level Gate	0.154 in	8-SO 8-SOIC	3.9 mm	100 mOhm	1 V	-55 °C	150 °C	MOSFET (Metal Oxide)	2	N-Channel	Dual	Surface Mount	3.5 A
INFINEON IRF9952	14 nC	190 pF 190 pF	2 VA	30 V	Logic Level Gate	0.154 in	8-SO 8-SOIC	3.9 mm	100 mOhm	1 V	-55 °C	150 °C	MOSFET (Metal Oxide)		N P-Channel		Surface Mount		2.3 A	3.5 A
INFINEON IRF9953	12 nC	190 pF 190 pF	2 VA	30 V	Logic Level Gate	0.154 in	8-SO 8-SOIC	3.9 mm	250 mOhm	1 V	-55 °C	150 °C	MOSFET (Metal Oxide)	2	P-Channel	Dual	Surface Mount	2.3 A
INFINEON IRF9952TRPBF	14 nC	190 pF 190 pF	2 VA	30 V	Logic Level Gate	0.154 in	8-SO 8-SOIC	3.9 mm	100 mOhm	1 V	-55 °C	150 °C	MOSFET (Metal Oxide)		N P-Channel		Surface Mount		2.3 A	3.5 A
INFINEON IRF9952TR	14 nC	190 pF 190 pF	2 VA	30 V	Logic Level Gate	0.154 in	8-SO 8-SOIC	3.9 mm	100 mOhm	1 V	-55 °C	150 °C	MOSFET (Metal Oxide)		N P-Channel		Surface Mount		2.3 A	3.5 A

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

IRF9953TRPBF | Datasheet

IR Part Numbering System