IRF995 Series
Manufacturer: INFINEON
MOSFET 2N-CH 30V 3.5A 8SO
| Part | Gate Charge (Max) | Input Capacitance (Ciss) (Max) | Power - Max | Drain to Source Voltage (Vdss) | FET Feature | Package Length | Package Name | Package Width | Rds On (Max) | Vgs(th) (Max) | Operating Temperature (Min) | Operating Temperature (Max) | Technology | Channel Count | Configuration | Configuration - Features | Mounting Type | Current - Continuous Drain (Id) | Current - Continuous Drain (Id) (Maximum) | Current - Continuous Drain (Id) (Typical) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
INFINEON | 14 nC | 190 pF 190 pF | 2 VA | 30 V | Logic Level Gate | 0.154 in | 8-SO 8-SOIC | 3.9 mm | 100 mOhm | 1 V | -55 °C | 150 °C | MOSFET (Metal Oxide) | 2 | N-Channel | Dual | Surface Mount | 3.5 A | ||
INFINEON | 12 nC | 190 pF 190 pF | 2 VA | 30 V | 0.154 in | 8-SO 8-SOIC | 3.9 mm | 250 mOhm | 1 V | -55 °C | 150 °C | MOSFET (Metal Oxide) | 2 | P-Channel | Dual | Surface Mount | 2.3 A | |||
INFINEON | 14 nC | 190 pF 190 pF | 2 VA | 30 V | Logic Level Gate | 0.154 in | 8-SO 8-SOIC | 3.9 mm | 100 mOhm | 1 V | -55 °C | 150 °C | MOSFET (Metal Oxide) | N P-Channel | Surface Mount | 2.3 A | 3.5 A | |||
INFINEON | 12 nC | 190 pF 190 pF | 2 VA | 30 V | 0.154 in | 8-SO 8-SOIC | 3.9 mm | 250 mOhm | 1 V | -55 °C | 150 °C | MOSFET (Metal Oxide) | 2 | P-Channel | Dual | Surface Mount | 2.3 A | |||
INFINEON | 12 nC | 190 pF 190 pF | 2 VA | 30 V | Logic Level Gate | 0.154 in | 8-SO 8-SOIC | 3.9 mm | 250 mOhm | 1 V | -55 °C | 150 °C | MOSFET (Metal Oxide) | 2 | P-Channel | Dual | Surface Mount | 2.3 A | ||
INFINEON | 14 nC | 190 pF 190 pF | 2 VA | 30 V | Logic Level Gate | 0.154 in | 8-SO 8-SOIC | 3.9 mm | 100 mOhm | 1 V | -55 °C | 150 °C | MOSFET (Metal Oxide) | 2 | N-Channel | Dual | Surface Mount | 3.5 A | ||
INFINEON | 14 nC | 190 pF 190 pF | 2 VA | 30 V | Logic Level Gate | 0.154 in | 8-SO 8-SOIC | 3.9 mm | 100 mOhm | 1 V | -55 °C | 150 °C | MOSFET (Metal Oxide) | N P-Channel | Surface Mount | 2.3 A | 3.5 A | |||
INFINEON | 12 nC | 190 pF 190 pF | 2 VA | 30 V | Logic Level Gate | 0.154 in | 8-SO 8-SOIC | 3.9 mm | 250 mOhm | 1 V | -55 °C | 150 °C | MOSFET (Metal Oxide) | 2 | P-Channel | Dual | Surface Mount | 2.3 A | ||
INFINEON | 14 nC | 190 pF 190 pF | 2 VA | 30 V | Logic Level Gate | 0.154 in | 8-SO 8-SOIC | 3.9 mm | 100 mOhm | 1 V | -55 °C | 150 °C | MOSFET (Metal Oxide) | N P-Channel | Surface Mount | 2.3 A | 3.5 A | |||
INFINEON | 14 nC | 190 pF 190 pF | 2 VA | 30 V | Logic Level Gate | 0.154 in | 8-SO 8-SOIC | 3.9 mm | 100 mOhm | 1 V | -55 °C | 150 °C | MOSFET (Metal Oxide) | N P-Channel | Surface Mount | 2.3 A | 3.5 A |