PMG85XP,115

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Nexperia USA Inc.

20 V, 2 A P-CHANNEL TRENCH MOSFET

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PMG85XP,115

Active

Nexperia USA Inc.

20 V, 2 A P-CHANNEL TRENCH MOSFET

Find alt

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Description Specifications Series Pricing CAD Documents

Description

General part information

PMG85XP Series

P-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Technical Specifications

Parameters and characteristics for this part

Specification	PMG85XP,115

Current - Continuous Drain (Id) (Tj)	2 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On)	2.5 V
Drive Voltage (Min Rds On)	4.5 V
FET Type	P-Channel
Gate Charge (Max)	7.2 nC
Input Capacitance (Ciss) (Max)	560 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	6-TSSOP, SC-88, SOT-363
Package Name	6-TSSOP
Power Dissipation (Max)	375 mW, 2.4 W
Rds On (Max)	115 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max)	1.15 V

PMG85XP Series

20 V, 2 A P-channel Trench MOSFET

Part	Technology	Drive Voltage (Max Rds On)	Drive Voltage (Min Rds On)	Gate Charge (Max)	Package Name	Vgs(th) (Max)	Input Capacitance (Ciss) (Max)	Power Dissipation (Max)	Rds On (Max)	Package / Case	Vgs (Max)	FET Type	Mounting Type	Current - Continuous Drain (Id) (Tj)	Operating Temperature (Min)	Operating Temperature (Max)	Drain to Source Voltage (Vdss)
Nexperia USA Inc. PMG85XP,115	MOSFET (Metal Oxide)	2.5 V	4.5 V	7.2 nC	6-TSSOP	1.15 V	560 pF	2.4 W 375 mW	115 mOhm	6-TSSOP SC-88 SOT-363	12 V	P-Channel	Surface Mount	2 A	-55 °C	150 °C	20 V