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20 V, 2 A P-channel Trench MOSFET
Description
AI
P-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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20 V, 2 A P-channel Trench MOSFET
20 V, 2 A P-channel Trench MOSFET
| Part | Technology | Drive Voltage (Max Rds On) | Drive Voltage (Min Rds On) | Gate Charge (Max) | Package Name | Vgs(th) (Max) | Input Capacitance (Ciss) (Max) | Power Dissipation (Max) | Rds On (Max) | Package / Case | Vgs (Max) | FET Type | Mounting Type | Current - Continuous Drain (Id) (Tj) | Operating Temperature (Min) | Operating Temperature (Max) | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | MOSFET (Metal Oxide) | 2.5 V | 4.5 V | 7.2 nC | 6-TSSOP | 1.15 V | 560 pF | 2.4 W 375 mW | 115 mOhm | 6-TSSOP SC-88 SOT-363 | 12 V | P-Channel | Surface Mount | 2 A | -55 °C | 150 °C | 20 V |