IXFT12N90Q

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IXYS

MOSFET N-CH 900V 12A TO268

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IXYS

MOSFET N-CH 900V 12A TO268

Technical Specifications

Parameters and characteristics for this part

Specification	IXFT12N90Q

Current - Continuous Drain (Id) @ 25°C	12 A
Drain to Source Voltage (Vdss)	900 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	90 nC
Input Capacitance (Ciss) (Max) @ Vds	2900 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D3PAK (2 Leads + Tab), TO-268AA, TO-268-3
Power Dissipation (Max) [Max]	300 W
Rds On (Max) @ Id, Vgs	900 mOhm
Supplier Device Package	TO-268AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	5.5 V

Part	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Mounting Type	Technology	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs
IXYS IXFT12N90Q	20 V	12 A	-55 °C	150 °C	D3PAK (2 Leads + Tab) TO-268-3 TO-268AA	2900 pF	N-Channel	Surface Mount	MOSFET (Metal Oxide)	900 mOhm	5.5 V	900 V	10 V	300 W	90 nC	TO-268AA
IXYS IXFT12N100	20 V	12 A	-55 °C	150 °C	D3PAK (2 Leads + Tab) TO-268-3 TO-268AA	4000 pF	N-Channel	Surface Mount	MOSFET (Metal Oxide)		4.5 V	1000 V	10 V	300 W		TO-268AA	155 nC
IXYS IXFT12N100F	20 V	12 A	-55 °C	150 °C	D3PAK (2 Leads + Tab) TO-268-3 TO-268AA		N-Channel	Surface Mount	MOSFET (Metal Oxide)		5.5 V	1000 V	10 V	300 W	77 nC	TO-268

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 900 V 12A (Tc) 300W (Tc) Surface Mount TO-268AA

Technical documentation and resources

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