MOSFET N-CH 900V 12A TO268
| Part | Vgs (Max) | Current - Continuous Drain (Id) @ 25°C | Operating Temperature [Min] | Operating Temperature [Max] | Package / Case | Input Capacitance (Ciss) (Max) @ Vds | FET Type | Mounting Type | Technology | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) | Power Dissipation (Max) [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IXYS | 20 V | 12 A | -55 °C | 150 °C | D3PAK (2 Leads + Tab) TO-268-3 TO-268AA | 2900 pF | N-Channel | Surface Mount | MOSFET (Metal Oxide) | 900 mOhm | 5.5 V | 900 V | 10 V | 300 W | 90 nC | TO-268AA | |
IXYS | 20 V | 12 A | -55 °C | 150 °C | D3PAK (2 Leads + Tab) TO-268-3 TO-268AA | 4000 pF | N-Channel | Surface Mount | MOSFET (Metal Oxide) | 4.5 V | 1000 V | 10 V | 300 W | TO-268AA | 155 nC | ||
IXYS | 20 V | 12 A | -55 °C | 150 °C | D3PAK (2 Leads + Tab) TO-268-3 TO-268AA | N-Channel | Surface Mount | MOSFET (Metal Oxide) | 5.5 V | 1000 V | 10 V | 300 W | 77 nC | TO-268 |