SPU08P06P

Obsolete

Infineon Technologies

MOSFET P-CH 60V 8.83A TO251-3

Search across all available documentation for this part.

Obsolete

Infineon Technologies

MOSFET P-CH 60V 8.83A TO251-3

Technical Specifications

Parameters and characteristics for this part

Specification	SPU08P06P

Current - Continuous Drain (Id) @ 25°C	8.83 A
Drain to Source Voltage (Vdss)	60 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	13 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	420 pF
Mounting Type	Through Hole
Package / Case	IPAK, TO-251-3 Short Leads, TO-251AA
Power Dissipation (Max)	42 W
Rds On (Max) @ Id, Vgs	300 mOhm
Supplier Device Package	PG-TO251-3
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	4 V

Part	FET Type	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Mounting Type	Drain to Source Voltage (Vdss)	Supplier Device Package	Rds On (Max) @ Id, Vgs	Package / Case	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Current - Continuous Drain (Id) @ 25°C
Infineon Technologies SPU08P06P	P-Channel	4 V	42 W	Through Hole	60 V	PG-TO251-3	300 mOhm	IPAK TO-251-3 Short Leads TO-251AA	MOSFET (Metal Oxide)	13 nC	420 pF	8.83 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1500	$ 0.39

General part information

P-Channel 60 V 8.83A (Ta) 42W (Tc) Through Hole PG-TO251-3

Technical documentation and resources

No documents available