MOSFET P-CH 60V 8.83A TO251-3
| Part | FET Type | Vgs(th) (Max) @ Id | Power Dissipation (Max) | Mounting Type | Drain to Source Voltage (Vdss) | Supplier Device Package | Rds On (Max) @ Id, Vgs | Package / Case | Technology | Gate Charge (Qg) (Max) @ Vgs [Max] | Input Capacitance (Ciss) (Max) @ Vds [Max] | Current - Continuous Drain (Id) @ 25°C |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | P-Channel | 4 V | 42 W | Through Hole | 60 V | PG-TO251-3 | 300 mOhm | IPAK TO-251-3 Short Leads TO-251AA | MOSFET (Metal Oxide) | 13 nC | 420 pF | 8.83 A |