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TSM220NB06LCR RLG

TSM220NB06LCR RLG

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Taiwan Semiconductor Corporation

MOSFETS 60V, 35A, SINGLE N-CHANNEL POWER MOSFET

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TSM220NB06LCR RLG

TSM220NB06LCR RLG

Active
Taiwan Semiconductor Corporation

MOSFETS 60V, 35A, SINGLE N-CHANNEL POWER MOSFET

Find alt

Description

General part information

TSM Series

N-Channel 60 V 8A (Ta), 35A (Tc) 3.1W (Ta), 68W (Tc) Surface Mount 8-PDFN (5.2x5.75)

Technical Specifications

Parameters and characteristics for this part

SpecificationTSM220NB06LCR RLG
Current - Continuous Drain (Id) (Ta)8 A
Current - Continuous Drain (Id) (Tc)35 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On)4.5 V
Drive Voltage (Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)23 nC
Input Capacitance (Ciss) (Max)1314 pF
Mounting TypeSurface Mount
Operating Temperature (Max)175 °C
Operating Temperature (Min)-55 °C
Package / Case8-PowerLDFN
Package Length5.2 mm
Package Name8-PDFN
Package Width5.75 mm
Power Dissipation (Max)3.1 W, 68 W
Rds On (Max)22 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)2.5 V

Pricing

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CAD

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Documents

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