TSM220NB06LCR RLG

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Taiwan Semiconductor Corporation

MOSFET N-CH 60V 8A/35A 8PDFN

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Taiwan Semiconductor Corporation

MOSFET N-CH 60V 8A/35A 8PDFN

Technical Specifications

Parameters and characteristics for this part

Specification	TSM220NB06LCR RLG

Current - Continuous Drain (Id) @ 25°C	8 A, 35 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	23 nC
Input Capacitance (Ciss) (Max) @ Vds	1314 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerLDFN
Power Dissipation (Max)	3.1 W, 68 W
Rds On (Max) @ Id, Vgs	22 mOhm
Supplier Device Package	8-PDFN
Supplier Device Package [x]	5.2
Supplier Device Package [y]	5.75
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	FET Type	Mounting Type	Supplier Device Package	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Package / Case	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Technology	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package [y]	Supplier Device Package [x]
Taiwan Semiconductor Corporation TSM220NB06CR RLG	-55 °C	175 ░C	23 nC	N-Channel	Surface Mount	8-PDFN (5x6)	22 mOhm	8 A 35 A	8-PowerTDFN	3.1 W 68 W	60 V	4 V	1454 pF	20 V	MOSFET (Metal Oxide)	10 V
Taiwan Semiconductor Corporation TSM220NB06LCR RLG	-55 °C	175 ░C	23 nC	N-Channel	Surface Mount	8-PDFN	22 mOhm	8 A 35 A	8-PowerLDFN	3.1 W 68 W	60 V	2.5 V	1314 pF	20 V	MOSFET (Metal Oxide)	4.5 V 10 V	5.75	5.2

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General part information

N-Channel 60 V 8A (Ta), 35A (Tc) 3.1W (Ta), 68W (Tc) Surface Mount 8-PDFN (5.2x5.75)

Technical documentation and resources