
STF120NF10
ObsoleteMOSFET N-CH 100V 41A TO220FP
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STF120NF10
ObsoleteMOSFET N-CH 100V 41A TO220FP
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Technical Specifications
Parameters and characteristics for this part
| Specification | STF120NF10 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 41 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 233 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 5200 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-220-3 Full Pack |
| Power Dissipation (Max) | 45 W |
| Rds On (Max) @ Id, Vgs | 10.5 mOhm |
| Supplier Device Package | TO-220FP |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 4.01 | |
| 50 | $ 3.18 | |||
| 100 | $ 2.73 | |||
| 500 | $ 2.42 | |||
Description
General part information
STF12N50M2 Series
This device is an N-channel Power MOSFET developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. This revolutionary Power MOSFET associates a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
Documents
Technical documentation and resources